模擬開(kāi)關(guān),DPDT AN/Alog Switch,1.8×1.4mm,WQFN-10,N/A,SGM7222YWQ10/TR,SGMICRO
藍(lán)牙/BB處理芯片,BT trans and BB processor,Transceiver and Baseband,50pin,4.5×4×0.8mm,0.50 mm,Non-Security,N/A,BCM2070CB0KUFBG,BROADCOM
基帶芯片,Baseband Chipset,424 CSP,N/A,12×12×1.05 mm,0.5 mm,Security,N/A,QSC-6055-0-424CSP-TR-08-0,QUALCOMM
電源管理芯片,Power Management Unit,97  CSP,6.0×6.0×1.2mm,0.50 mm,N/A,PM-6658-0-97CSP-TR-03,QUALCOMM
連接器,CONN C-Clip Contact W:4.0mm H:1.55mm SMT(3.6t) RoHS,DY-C30BQ-G,Daeyoung KTX
連接器,CONN C-Clip Contact W:3.5mm H:1.16mm SMT (2.2t) RoHS,DY-C20AP-G,Daeyoung KTX
集成電路,IC Positive Overvoltage Controller with Internal Low RON NMOS FET, 1.6mmx2mm DFN6 RoHS,NCP349MNAETBG,Onsemi
磁珠,Ferrite bead 30ohm@100MHz 25% 0.035ohm 2.2A SMT 0402 RoHS,BLM15PD300SN1D,Murata
濾波器,Filter ESD Common Mode Volt=6.3V Current=10mA 1.27x1.0x0.6mm Tc=-40/85C SMT RoHS,ICMEF112P900MFR,Innochips Technology
電感,Inductor Hi-freq 5.6nH@100MHz ±3% 250mA Multilayer SMT0201 RoHS,MLG0603S5N6HT000,TDK
電感,Inductor Hi-freq 56nH@100MHz ±3% 50mA Multilayer SMT0201 RoHS,MLG0603S56NHT000,TDK
電感,Inductor Hi-freq 3.9nH@100MHz ±0.1nH 300mA Multilayer SMT0201 RoHS,MLG0603S3N9BT000,TDK
電感,Inductor Hi-freq 2.2nH@100MHz ±0.1nH 400mA Multilayer SMT0201 RoHS,MLG0603S2N2BT000,TDK
電感,Inductor Hi-freq 1.5nH@100MHz ±0.1nH 550mA Multilayer SMT0201 RoHS,MLG0603S1N5BT000,TDK
電容,CAP Cer 0.082uF 6.3V +/-10% X5R SMT0201 RoHS,GRM033R60J823KE19D,Murata
電容,CAP Cer 4.7uF 6.3V 20% X5R SMT0402 RoHS,GRM155R60J475ME87,Murata
電容,CAP Cer 0.033uF 6.3V +/-10% X5R SMT0201 RoHS,GRM033R60J333KE01D,Murata
電容,CAP Cer 0.22uF 10V 10% X5R SMT0402 RoHS,GRM155R61A224KE19D,Murata
電容,CAP Cer 1uF 10V 10% X5R SMT0402 RoHS,GRM155R61A105KE15D,Murata
電容,CAP Cer 0.1uF 10V ±10% X5R SMT0201 RoHS,GRM033R61A104KE15D,Murata
電容,CAP Cer 3300pF 16V +/-10% X7R SMT0201 RoHS,GRM033R71C332KA88D,Murata
電容,CAP Cer 0.01uF 10V +/-10% X7R SMT0201 RoHS,GRM033R71A103KA01D,Murata
電容,CAP Cer 1000pF 25V 10% X7R 0201 RoHS,GRM033R71E102KA01D,Murata
電容,CAP Cer 6.8pF 25V ±0.1pF C0G SMT0201 RoHS,GRM0335C1E6R8BA01D,Murata
電容,CAP Cer 39pF 25V 5% C0G SMT0201 RoHS,GRM0335C1E390JD01D,Murata
電容,CAP Cer 33pF 25V 5% C0G SMT0201 RoHS,GRM0335C1E330JD01D,Murata
電容,CAP Cer 20pF 25V 5% C0G SMT0201 RoHS,GRM0335C1E200JA01D,Murata
電容,CAP Cer 1.5pF 25V ±0.1pF C0G SMT0201 RoHS,GRM0335C1E1R5BA01D,Murata
電容,CAP Cer 100pF 50V 5% C0G SMT0402 RoHS,GRM1555C1H101JZ01D,Murata
電容,CAP Cer 100pF 25V 5% C0G SMT0201 
晶體,Crystal,26MHz,±10 ppm,7.86 pF,3.2×2.5×0.55mm,N/A,W-211-133,NDK
晶體,Crystal,26MHz,±2.5 ppm,10.0 pF,2.5×3.2×0.9mm,N/A,ENE3127B,NDK
同軸線連接器(母頭),Coaxial cable socket,Over PCB,3.0 PINs,N/A,2x2xH1.4mm,W/O POST+W/O DIP,N/A,W.FL-R-SMT-1(80),HRS
FPC連接器,FPC Connector,Over PCB,35.0 PINs,0.60 mm,12.4x4.0xH0.9mm,W/O POST+W/O DIP,N/A,XF2C-3555-41A,OMRON
微動(dòng)開(kāi)關(guān),Jiggle switch,,,,,LS10N2T,TACT SWITCH
天線開(kāi)關(guān),Antenna switch,,,3.2×3.2×1.4mm,,,LMSP33CA-465,Murata
鈕扣電池,,LITHIUM,3V,5uAh,,HB414-IV01E,SEIKO,
穩(wěn)壓器,LDO,2×2.1×1mm,SC-82AB,3.3V,150mA,RP103Q331D,RICOH
穩(wěn)壓器,Low noise 150mA LDO regulator,2.9×2.8mm,SOT23-5,2.8V,150mA,RP103N281D-TR-FF,RICOH
集成電路,LDO,SOT23-5,1.8V,150mA,PSRR=75db/1KHz,,,RP103N181D-TR-FF,RICOH,
帶濾波功能靜電防護(hù)器,EMI filter with ESD,8.0 Channels,Uni-Directional,DFN16(1.6×4.0mm),N/A,NUF8401MN,ON SEMI
場(chǎng)效應(yīng)管,MOSFET,N Channel,150.0 mW,5.0 ohm,SOT416,N/A,2SK3019,ROHM
場(chǎng)效應(yīng)管,MOSFET,P-Channel,,-20V,-3A,NTHD4P02FT1G,ON SEMI,
開(kāi)關(guān)二極管,Switching Diode,High-Speed Switching Diode,SOD523 CASE502,Uni-Directional,N/A,1SS400T1,ON SEMI
馬達(dá),Vibrator motor,,cylindrical,Ф4xL8.5mm,DC3.0V,spring contact,BL4I2G-PU,BAOLONG,,
電感,Inductor,1.3 nH,±0.3 nH,DCR=0.09 ohm,300 mA,0402,MultiLayer,N/A,LQG15HS1N3S02D,MURATA
電感,Inductor,24 nH,±3 %,DCR=0.52 ohm,280 mA,0402,Wire-Wound,N/A,LQW15AN24NH00D,MURATA
電感,Inductor,1.2 nH,±0.1 nH,DCR=0.1 ohm,390 mA,0402,Film,N/A,LQP15MN1N2B02D,MURATA
功率電感,Power Inductor,4.7 uH,±20 %,DCR=0.12 ohm,1020 mA,40 MHz,1040 mA,Wire-Wound,3.0×3.0×1.5 mm,N/A,NR3015T4R7M,TAIYO YUDEN
電感,Inductor,18 nH,±5 %,DCR=0.55 ohm,300 m